Autor(en): | Altenheiner, Silke |
Titel: | Investigation of n +-in-n planar silicon pixel detectors for application in the ATLAS experiment |
Sprache (ISO): | en |
Zusammenfassung: | One of the two large multi-purpose detectors at the LHC at CERN is the ATLAS detector. The ATLAS detector consists of several sub-detectors, each with diffe- rent tasks. The ATLAS pixel detector was enlarged with a fourth pixel layer, the Insetable B-Layer (IBL) during the first long shutdown. The IBL will increase the tracking performance under high-luminosity conditions. The IBL consists to 75% of n+-in-n slim edge planar pixel sensors. Sensors with a thickness of 200 µm and a requested fluence of 5 x 10 15 n eq cm2 were investigated in terms of leakage current per pixel, power dissipation, and average hit efficiency at bias voltages up to 1000V and a temperature of -15°C. Testbeam and laboratory measurements for the sensor decision for the IBL are presented. |
Schlagwörter: | ATLAS IBL Testbeam MCz |
Schlagwörter (RSWK): | LHC ATLAS <Teilchendetektor> |
URI: | http://hdl.handle.net/2003/34322 http://dx.doi.org/10.17877/DE290R-16399 |
Erscheinungsdatum: | 2015 |
Enthalten in den Sammlungen: | Experimentelle Physik IV |
Dateien zu dieser Ressource:
Datei | Beschreibung | Größe | Format | |
---|---|---|---|---|
Dissertation.pdf | DNB | 46.74 MB | Adobe PDF | Öffnen/Anzeigen |
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