Authors: | Tappertzhofen, Stefan |
Title: | Impact of electrode materials on the performance of amorphous IGZO thin-film transistors |
Language (ISO): | en |
Abstract: | This study reports on the fabrication and characterization of thin-film transistors (TFTs) based on indium–gallium–zinc–oxide (IGZO) with various source- and drain-region metals (Pt, W and Ti). The performance of the IGZO transistors is compared to TFTs based on hydrogenated amorphous silicon (a-Si:H) with Pt source- and drain-regions. From the output characteristics maximum saturation mobilities of µ = 0.45 cm2/Vs for a-Si:H, and µ = 24 to 50 cm2/Vs for IGZO TFTs are extracted, which are competitive to high-performance thin-film transistors. The study reveals a general influence of the source- and drain-electrode material on the maximum saturation mobility and inverse sub-threshold slope. |
URI: | http://hdl.handle.net/2003/42070 http://dx.doi.org/10.17877/DE290R-23903 |
Issue Date: | 2022-06-15 |
Rights link: | https://creativecommons.org/licenses/by/4.0/ |
Appears in Collections: | Lehrstuhl für Mikro- und Nanoelektronik |
Files in This Item:
File | Description | Size | Format | |
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s43580-022-00298-z.pdf | DNB | 1.66 MB | Adobe PDF | View/Open |
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