Characterisation of ionisation induced surface effects for the optimisation of silicon detectors for particle physics applications

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DC Field	Value	Language
dc.contributor.advisor	Gößling, Claus	de
dc.contributor.author	Wüstenfeld, Jens	de
dc.date.accessioned	2004-12-06T11:27:06Z	-
dc.date.available	2004-12-06T11:27:06Z	-
dc.date.created	2001-07-13	de
dc.date.issued	2001-11-12	de
dc.identifier.uri	http://hdl.handle.net/2003/2351	-
dc.identifier.uri	http://dx.doi.org/10.17877/DE290R-652	-
dc.format.extent	14139495 bytes	-
dc.format.extent	7045659 bytes	-
dc.format.mimetype	application/postscript	-
dc.format.mimetype	application/pdf	-
dc.language.iso	en	de
dc.publisher	Universität Dortmund	de
dc.subject	silicon	en
dc.subject	detector	en
dc.subject	silicon radiation detector	en
dc.subject	radiation damage	en
dc.subject	Surface damage	en
dc.subject	Silizium	de
dc.subject	Strahlenschäden	de
dc.subject	Detektor	de
dc.subject.ddc	530	de
dc.title	Characterisation of ionisation induced surface effects for the optimisation of silicon detectors for particle physics applications	en
dc.type	Text	de
dc.contributor.referee	Lindström, J. L.	de
dc.date.accepted	2001	-
dc.type.publicationtype	doctoralThesis	de
dcterms.accessRights	open access	-
Appears in Collections:	Experimentelle Physik IV

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dissertation.ps		13.81 MB	Postscript	View/Open
wuestenfeldunt.pdf	DNB	6.88 MB	Adobe PDF	View/Open

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