Authors: Kurakin, Andriy
Title: Transport and noise properties of AlGaN/GaN heterostructures for high-frequency applications
Language (ISO): en
Subject Headings: III-nitrides
Noise
Low-temperature transport
AlGaN/GaN-structure
High Electron Mobility Transistor
HEMT
Resonant Tunneling Diode
RTD
URI: http://hdl.handle.net/2003/24955
http://dx.doi.org/10.17877/DE290R-15751
Issue Date: 2008-01-21T10:24:29Z
Appears in Collections:Experimentelle Physik II

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