Scattering processes in quantum dot devices with the example of an amplifier

Abstract

All experiments performed in this work deal with a device that is a quantum dot based semiconductor optical amplifier. This chapter explains why especially InAs quantum dots in a waveguide were chosen to perform them. In addition all basics necessary to understand the experimental methods, the setup and the models will be described. The first section will deal with semiconductors and the special terminology used for describing them. After that the advantages of quantum dots in comparison to other semiconductor nanostructures are clarified. In the third section the device itself is focused, the Semiconductor Optical Amplifier (SOA) and its characteristics. First the design will be discussed then the optical characteristics. The performed experiments are described in detail in the fourth section of this chapter. Both the technical setup and the used methods will be explained. This sections is completed with a first characterization of the sample. At last I introduce the theory necessary for following the models used in chapter 4 and 5 of this thesis.