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dc.contributor.advisorGößling, Claus-
dc.contributor.authorAltenheiner, Silke-
dc.date.accessioned2015-11-06T07:10:26Z-
dc.date.available2015-11-06T07:10:26Z-
dc.date.issued2015-
dc.identifier.urihttp://hdl.handle.net/2003/34322-
dc.identifier.urihttp://dx.doi.org/10.17877/DE290R-16399-
dc.description.abstractOne of the two large multi-purpose detectors at the LHC at CERN is the ATLAS detector. The ATLAS detector consists of several sub-detectors, each with diffe- rent tasks. The ATLAS pixel detector was enlarged with a fourth pixel layer, the Insetable B-Layer (IBL) during the first long shutdown. The IBL will increase the tracking performance under high-luminosity conditions. The IBL consists to 75% of n+-in-n slim edge planar pixel sensors. Sensors with a thickness of 200 µm and a requested fluence of 5 x 10 15 n eq cm2 were investigated in terms of leakage current per pixel, power dissipation, and average hit efficiency at bias voltages up to 1000V and a temperature of -15°C. Testbeam and laboratory measurements for the sensor decision for the IBL are presented.en
dc.language.isoende
dc.subjectATLASde
dc.subjectIBLde
dc.subjectTestbeamen
dc.subjectMCzde
dc.subject.ddc530-
dc.titleInvestigation of n +-in-n planar silicon pixel detectors for application in the ATLAS experimenten
dc.typeTexten
dc.contributor.refereeKröninger, Kevin-
dc.date.accepted2015-07-09-
dc.type.publicationtypedoctoralThesisen
dc.subject.rswkLHCde
dc.subject.rswkATLAS <Teilchendetektor>de
dcterms.accessRightsopen access-
Appears in Collections:Experimentelle Physik IV

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