Transport and noise properties of AlGaN/GaN heterostructures for high-frequency applications

Kurakin, Andriy2008-01-212008-01-212008-01-21http://hdl.handle.net/2003/2495510.17877/DE290R-15751enIII-nitridesNoiseLow-temperature transportAlGaN/GaN-structureHigh Electron Mobility TransistorHEMTResonant Tunneling DiodeRTD530Transport and noise properties of AlGaN/GaN heterostructures for high-frequency applicationsdoctoral thesisurn:nbn:de:hbz:290-2003/24955-0