Tappertzhofen, StefanBraeuninger-Weimer, P.Gumprich, AlexanderChirca, I.Potočnik, T.Alexander-Webber, J. A.Hofmann, S.2024-03-202024-03-202023-02-24http://hdl.handle.net/2003/4239610.17877/DE290R-24232Memristive switches are among the most promising building blocks for future neuromorphic computing. These devices are based on a complex interplay of redox reactions on the nanoscale. Nanoionic phenomena enable non-linear and low-power resistance transition in ultra-short programming times. However, when not controlled, the same electrochemical reactions can result in device degradation and instability over time. Two-dimensional barriers have been suggested to precisely manipulate the nanoionic processes. But fabrication-friendly integration of these materials in memristive devices is challenging.Here we report on a novel process for graphene passivation of thin platinum and platinum/copper electrodes. We also studied the level of defects of graphene after deposition of selected oxides that are relevant for memristive switching.enSN applied sciences;5(3)https://creativecommons.org/licenses/by/4.0/Chemical vapor depositionCVDGraphene2D materialHeterostructureAdhesion layerMemristive switching620ResearchArticle