Kirstein, E.Yakovlev, D. R.Glazov, M. M.Zhukov, E. A.Kudlacik, D.Kalitukha, I. V.Sapega, V. F.Dimitriev, G. S.Semina, M. A.Nestoklon, M. O.Ivchenko, E. L.Kopteva, N. E.Dirin, D. N.Nazarenko, O.Kovalenko, M. V.Baumann, A.Höcker, J.Dyakonov, V.Bayer, M.2022-12-142022-12-142022-06-02http://hdl.handle.net/2003/41170http://dx.doi.org/10.17877/DE290R-23017The Landé or g-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI3, MAPb(Br0.5Cl0.5)3, MAPb(Br0.05Cl0.95)3, FAPbBr3, FA0.9Cs0.1PbI2.8Br0.2, MA=methylammonium and FA=formamidinium) and all-inorganic (CsPbBr3) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10 T at cryogenic temperatures. Further, we use first-principles density functional theory (DFT) calculations in combination with tight-binding and k ⋅ p approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.enMagneto-opticsQuantum mechanicsSemiconductorsSpintronicsUltrafast photonics530Text