Pape, SebastianFernández García, M.Moll, M.Montero, R.Palomo, F.R.Vila, I.Wiehe, M.2023-02-162023-02-162022-08-16http://hdl.handle.net/2003/41243http://dx.doi.org/10.17877/DE290R-23084A tabletop Two Photon Absorption-Transient Current Technique (TPA-TCT) set-up built at CERN was used to investigate a non-irradiated PIN diode, an irradiated PIN diode, and a non-irradiated 5 × 5-multipad HPK LGAD. The intrinsic three dimensional spatial resolution of this method is demonstrated under normal incidence of the laser probe. A charge collection versus depth profile of the non-irradiated PIN diode is presented, where reflection on the rear silicon-air interface was observed. It is found that the time-over-threshold versus depth profile is particularly suitable to determine the boundaries of the DUT's active volume. A depth scan of the irradiated PIN diode is discussed and a method to omit the single photon absorption background is presented. Finally, a charge collection measurement in the inter-pad region of the 5 × 5-multipad HPK LGAD is presented and it is demonstrated that TPA-TCT can be used to image the implantation and the electric field of segmented silicon devices in a three dimensional manner.enRadiation damage evaluation methodsSolid state detectorsLasersRadiation damage to detector materials (solid state)530Text