Suter, DieterEshlaghi, SoheylaMeier, CedrikReuter, D.Wieck, A. D.2008-02-122008-02-121999-12-01Soheyla Eshlaghi, Cedrik Meier, Dieter Suter, D. Reuter, and A.D. Wieck: Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. In: J. Appl. Phys. 86, 6605-6607 (1999).http://hdl.handle.net/2003/2502310.17877/DE290R-3474The implantation-induced intermixing depth profile for 100 keV Ga + ions was determined by photoluminescence measurements on a series of samples containing quantum wells at variable depth from the surface but identical thickness. They were uniformly implanted and subsequently a rapid thermal annealing was applied. The measured maximum of the intermixing occurred at a depth of about 70 nm, significantly deeper than theoretical predictions. These results are important for achieving sufficient intermixing with a low implantation dose, thereby optimizing crystal quality and lateral resolution.enAmerican Institute of Physics53010.1063/1.371720article (journal)http://link.aip.org/link/?JAPIAU/86/6605/1