Fleetwood, D. M.Pantelides, S. T.Rashkeev, S. N.Schrimpf, R. D.2004-12-032004-12-0320012001http://hdl.handle.net/2003/131910.17877/DE290R-11114enThe American Physical SocietyPhysical Review Letters530Defect Generation by Hydrogen at the Si-SiO2 Interface10.1103/PhysRevLett.87.165506article (journal)