Reversed Switch-On Dynistor Switches of Gigawatt Power Microsecond Pulses
dc.contributor.author | Aristov, Y. V. | de |
dc.contributor.author | Grekhov, I. V. | de |
dc.contributor.author | Korotkov, S. V. | de |
dc.contributor.author | Kozlov, A. K. | de |
dc.contributor.author | Lyublinsky, A. G. | de |
dc.date.accessioned | 2010-04-08T15:20:06Z | |
dc.date.available | 2010-04-08T15:20:06Z | |
dc.date.issued | 2008 | de |
dc.description.abstract | A high-power (250 kA and 25 kV) compact switch based on an assembly of reversed switch-on dynistors (RSDs) connected in series and a coaxial saturable-core choke, which is necessary for their effective switching, is described. An essential feature of this switch is a drastic reduction of the duration of RSDs control pulse, which allows using minimum dimensions and low inductance saturable core choke and obtain high rise rate (more than 30 kA/µs) of the switched current. The increased RSDs control pulse amplitude and rise rate that are required for RSDs switching on by reduced duration triggering pulse are attained by using a fast switch based on new type semiconductor devices deep-level dynistors (DLDs). | en |
dc.identifier.uri | http://hdl.handle.net/2003/27082 | |
dc.identifier.uri | http://dx.doi.org/10.17877/DE290R-8653 | |
dc.language.iso | en | de |
dc.publisher | Institut für Umformtechnik - Technische Universität Dortmund | de |
dc.relation.ispartof | 3rd International Conference on High Speed Forming, March 11 - 12, 2008, Dortmund, Germany | de |
dc.subject | assembly | en |
dc.subject | semiconductor | en |
dc.subject | switch | en |
dc.subject.ddc | 620 | de |
dc.subject.ddc | 670 | de |
dc.title | Reversed Switch-On Dynistor Switches of Gigawatt Power Microsecond Pulses | en |
dc.type | Text | de |
dc.type.publicationtype | conferenceObject | de |
dcterms.accessRights | open access |
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