Characterisation of irradiated and non-irradiated silicon sensors with a table-top two photon absorption TCT system
| dc.contributor.author | Pape, Sebastian | |
| dc.contributor.author | Fernández García, M. | |
| dc.contributor.author | Moll, M. | |
| dc.contributor.author | Montero, R. | |
| dc.contributor.author | Palomo, F.R. | |
| dc.contributor.author | Vila, I. | |
| dc.contributor.author | Wiehe, M. | |
| dc.date.accessioned | 2023-02-16T12:58:49Z | |
| dc.date.available | 2023-02-16T12:58:49Z | |
| dc.date.issued | 2022-08-16 | |
| dc.description.abstract | A tabletop Two Photon Absorption-Transient Current Technique (TPA-TCT) set-up built at CERN was used to investigate a non-irradiated PIN diode, an irradiated PIN diode, and a non-irradiated 5 × 5-multipad HPK LGAD. The intrinsic three dimensional spatial resolution of this method is demonstrated under normal incidence of the laser probe. A charge collection versus depth profile of the non-irradiated PIN diode is presented, where reflection on the rear silicon-air interface was observed. It is found that the time-over-threshold versus depth profile is particularly suitable to determine the boundaries of the DUT's active volume. A depth scan of the irradiated PIN diode is discussed and a method to omit the single photon absorption background is presented. Finally, a charge collection measurement in the inter-pad region of the 5 × 5-multipad HPK LGAD is presented and it is demonstrated that TPA-TCT can be used to image the implantation and the electric field of segmented silicon devices in a three dimensional manner. | en |
| dc.identifier.uri | http://hdl.handle.net/2003/41243 | |
| dc.identifier.uri | http://dx.doi.org/10.17877/DE290R-23084 | |
| dc.language.iso | en | de |
| dc.relation.ispartofseries | Journal of Instrumentation;17(8) | |
| dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
| dc.subject | Radiation damage evaluation methods | en |
| dc.subject | Solid state detectors | en |
| dc.subject | Lasers | en |
| dc.subject | Radiation damage to detector materials (solid state) | en |
| dc.subject.ddc | 530 | |
| dc.title | Characterisation of irradiated and non-irradiated silicon sensors with a table-top two photon absorption TCT system | en |
| dc.type | Text | de |
| dc.type.publicationtype | article | de |
| dcterms.accessRights | open access | |
| eldorado.secondarypublication | true | de |
| eldorado.secondarypublication.primarycitation | S. Pape et al 2022 JINST 17 C08011 | de |
| eldorado.secondarypublication.primaryidentifier | DOI 10.1088/1748-0221/17/08/C08011 | de |