Depth profile of the implantation-enhanced intermixing of Ga + focused ion beam in AlAs/GaAs quantum wells

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dc.contributor.authorSuter, Dieter
dc.contributor.authorEshlaghi, Soheyla
dc.contributor.authorMeier, Cedrik
dc.contributor.authorReuter, D.
dc.contributor.authorWieck, A. D.
dc.date.accessioned2008-02-12T15:23:41Z
dc.date.available2008-02-12T15:23:41Z
dc.date.issued1999-12-01
dc.description.abstractThe implantation-induced intermixing depth profile for 100 keV Ga + ions was determined by photoluminescence measurements on a series of samples containing quantum wells at variable depth from the surface but identical thickness. They were uniformly implanted and subsequently a rapid thermal annealing was applied. The measured maximum of the intermixing occurred at a depth of about 70 nm, significantly deeper than theoretical predictions. These results are important for achieving sufficient intermixing with a low implantation dose, thereby optimizing crystal quality and lateral resolution.en
dc.identifier.citationSoheyla Eshlaghi, Cedrik Meier, Dieter Suter, D. Reuter, and A.D. Wieck: Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. In: J. Appl. Phys. 86, 6605-6607 (1999).en
dc.identifier.doi10.1063/1.371720
dc.identifier.urihttp://hdl.handle.net/2003/25023
dc.identifier.urihttp://dx.doi.org/10.17877/DE290R-3474
dc.identifier.urlhttp://link.aip.org/link/?JAPIAU/86/6605/1
dc.language.isoende
dc.publisherAmerican Institute of Physicsen
dc.rights©1999 American Institute of Physicsen
dc.subject.ddc530
dc.titleDepth profile of the implantation-enhanced intermixing of Ga + focused ion beam in AlAs/GaAs quantum wellsen
dc.typeTextde
dc.type.publicationtypearticleen
dcterms.accessRightsrestricted
eldorado.identifier.urlhttp://e3.physik.tu-dortmund.de/~suter/eprints/Depth_profile_of_Implantati.pdf

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