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dc.contributor.authorAristov, Y. V.de
dc.contributor.authorGrekhov, I. V.de
dc.contributor.authorKorotkov, S. V.de
dc.contributor.authorKozlov, A. K.de
dc.contributor.authorLyublinsky, A. G.de
dc.date.accessioned2010-04-08T15:20:06Z-
dc.date.available2010-04-08T15:20:06Z-
dc.date.issued2008de
dc.identifier.urihttp://hdl.handle.net/2003/27082-
dc.identifier.urihttp://dx.doi.org/10.17877/DE290R-8653-
dc.description.abstractA high-power (250 kA and 25 kV) compact switch based on an assembly of reversed switch-on dynistors (RSDs) connected in series and a coaxial saturable-core choke, which is necessary for their effective switching, is described. An essential feature of this switch is a drastic reduction of the duration of RSDs control pulse, which allows using minimum dimensions and low inductance saturable core choke and obtain high rise rate (more than 30 kA/µs) of the switched current. The increased RSDs control pulse amplitude and rise rate that are required for RSDs switching on by reduced duration triggering pulse are attained by using a fast switch based on new type semiconductor devices deep-level dynistors (DLDs).en
dc.language.isoende
dc.publisherInstitut für Umformtechnik - Technische Universität Dortmundde
dc.relation.ispartof3rd International Conference on High Speed Forming, March 11 - 12, 2008, Dortmund, Germanyde
dc.subjectassemblyen
dc.subjectsemiconductoren
dc.subjectswitchen
dc.subject.ddc620de
dc.subject.ddc670de
dc.titleReversed Switch-On Dynistor Switches of Gigawatt Power Microsecond Pulsesen
dc.typeTextde
dc.type.publicationtypeconferenceObjectde
dcterms.accessRightsopen access-
Appears in Collections:ICHSF 2008

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