Buried graphene heterostructures for electrostatic doping of low-dimensional materials

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dc.contributor.authorGumprich, A.
dc.contributor.authorLiedtke, J.
dc.contributor.authorBeck, S.
dc.contributor.authorChirca, I.
dc.contributor.authorPotočnik, T.
dc.contributor.authorAlexander-Webber, J. A.
dc.contributor.authorHofmann, S.
dc.contributor.authorTappertzhofen, S.
dc.date.accessioned2024-07-15T14:06:00Z
dc.date.available2024-07-15T14:06:00Z
dc.date.issued2023-04-13
dc.description.abstractThe fabrication and characterization of steep slope transistor devices based on low-dimensional materials requires precise electrostatic doping profiles with steep spatial gradients in order to maintain maximum control over the channel. In this proof-of-concept study we present a versatile graphene heterostructure platform with three buried individually addressable gate electrodes. The platform is based on a vertical stack of embedded titanium and graphene separated by an intermediate oxide to provide an almost planar surface. We demonstrate the functionality and advantages of the platform by exploring transfer and output characteristics at different temperatures of carbon nanotube field-effect transistors with different electrostatic doping configurations. Furthermore, we back up the concept with finite element simulations to investigate the surface potential. The presented heterostructure is an ideal platform for analysis of electrostatic doping of low-dimensional materials for novel low-power transistor devices.en
dc.identifier.urihttp://hdl.handle.net/2003/42600
dc.identifier.urihttp://dx.doi.org/10.17877/DE290R-24435
dc.language.isoende
dc.relation.hasparthttp://hdl.handle.net/2003/41227
dc.relation.ispartofseriesNanotechnology;34(26)
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/de
dc.subjectlow-dimensional materialsen
dc.subjectgraphene-heterostructuresen
dc.subjectelectrostatic dopingen
dc.subjectburied triple gatesen
dc.subjectsteep slope transistorsen
dc.subjectcarbon nanotube transistorsen
dc.subject.ddc620
dc.titleBuried graphene heterostructures for electrostatic doping of low-dimensional materialsen
dc.typeTextde
dc.type.publicationtypeArticlede
dcterms.accessRightsopen access
eldorado.secondarypublicationtruede
eldorado.secondarypublication.primarycitationA Gumprich et al 2023 Nanotechnology 34 265203de
eldorado.secondarypublication.primaryidentifierhttps://doi.org/10.1088/1361-6528/acbaa2de

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