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Transport and noise properties of AlGaN/GaN heterostructures for high-frequency applications

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Kurakin_PhD_Thesis.pdf (1.86 MB)

Date

2008-01-21T10:24:29Z

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Keywords

III-nitrides, Noise, Low-temperature transport, AlGaN/GaN-structure, High Electron Mobility Transistor, HEMT, Resonant Tunneling Diode, RTD

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http://hdl.handle.net/2003/24955
 http://dx.doi.org/10.17877/DE290R-15751

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Experimentelle Physik II