Transfer-free graphene passivation of sub 100 nm thin Pt and Pt–Cu electrodes for memristive devices
dc.contributor.author | Tappertzhofen, Stefan | |
dc.contributor.author | Braeuninger-Weimer, P. | |
dc.contributor.author | Gumprich, Alexander | |
dc.contributor.author | Chirca, I. | |
dc.contributor.author | Potočnik, T. | |
dc.contributor.author | Alexander-Webber, J. A. | |
dc.contributor.author | Hofmann, S. | |
dc.date.accessioned | 2024-03-20T13:20:11Z | |
dc.date.available | 2024-03-20T13:20:11Z | |
dc.date.issued | 2023-02-24 | |
dc.description.abstract | Memristive switches are among the most promising building blocks for future neuromorphic computing. These devices are based on a complex interplay of redox reactions on the nanoscale. Nanoionic phenomena enable non-linear and low-power resistance transition in ultra-short programming times. However, when not controlled, the same electrochemical reactions can result in device degradation and instability over time. Two-dimensional barriers have been suggested to precisely manipulate the nanoionic processes. But fabrication-friendly integration of these materials in memristive devices is challenging.Here we report on a novel process for graphene passivation of thin platinum and platinum/copper electrodes. We also studied the level of defects of graphene after deposition of selected oxides that are relevant for memristive switching. | en |
dc.identifier.uri | http://hdl.handle.net/2003/42396 | |
dc.identifier.uri | http://dx.doi.org/10.17877/DE290R-24232 | |
dc.language.iso | en | de |
dc.relation.ispartofseries | SN applied sciences;5(3) | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | de |
dc.subject | Chemical vapor deposition | en |
dc.subject | CVD | en |
dc.subject | Graphene | en |
dc.subject | 2D material | en |
dc.subject | Heterostructure | en |
dc.subject | Adhesion layer | en |
dc.subject | Memristive switching | en |
dc.subject.ddc | 620 | |
dc.title | Transfer-free graphene passivation of sub 100 nm thin Pt and Pt–Cu electrodes for memristive devices | en |
dc.type | Text | de |
dc.type.publicationtype | ResearchArticle | de |
dcterms.accessRights | open access | |
eldorado.secondarypublication | true | de |
eldorado.secondarypublication.primarycitation | Tappertzhofen, S., Braeuninger-Weimer, P., Gumprich, A. et al. Transfer-free graphene passivation of sub 100 nm thin Pt and Pt–Cu electrodes for memristive devices. SN Appl. Sci. 5, 91 (2023). https://doi.org/10.1007/s42452-023-05314-x | de |
eldorado.secondarypublication.primaryidentifier | https://doi.org/10.1007/s42452-023-05314-x | de |