Light-induced Knight shifts in GaAs/AlGaAs quantum wells
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Date
2005-05-31
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The American Physical Society
Abstract
The coupling between quantum-confined electron spins in semiconductor heterostructures and nuclear spins dominates the dephasing of spin qubits in III/V semiconductors. The interaction can be measured through the electron-spin dynamics or through its effect on the nuclear spin. Here, we discuss the resulting shift of the NMR frequency (the Knight shift) and measure its size as a function of the charge-carrier density for photoexcited charge carriers in a GaAs quantum well.
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Eickhoff, M.; Fustmann, S.; Suter, D.: Light-induced Knight shifts in GaAs/AlGaAs quantum wells. In: Physical Review B Jg. 71(2005), 195332.