Light-induced Knight shifts in GaAs/AlGaAs quantum wells

dc.contributor.authorSuter, Dieter
dc.contributor.authorFustmann, S.
dc.contributor.authorEickhoff, M.
dc.date.accessioned2008-06-02T08:59:21Z
dc.date.available2008-06-02T08:59:21Z
dc.date.issued2005-05-31
dc.description.abstractThe coupling between quantum-confined electron spins in semiconductor heterostructures and nuclear spins dominates the dephasing of spin qubits in III/V semiconductors. The interaction can be measured through the electron-spin dynamics or through its effect on the nuclear spin. Here, we discuss the resulting shift of the NMR frequency (the Knight shift) and measure its size as a function of the charge-carrier density for photoexcited charge carriers in a GaAs quantum well.en
dc.identifier.citationEickhoff, M.; Fustmann, S.; Suter, D.: Light-induced Knight shifts in GaAs/AlGaAs quantum wells. In: Physical Review B Jg. 71(2005), 195332.de
dc.identifier.doi10.1103/PhysRevB.71.195332
dc.identifier.urihttp://hdl.handle.net/2003/25383
dc.identifier.urihttp://dx.doi.org/10.17877/DE290R-11828
dc.identifier.urlhttp://dx.doi.org/10.1103/PhysRevB.71.195332
dc.language.isoende
dc.publisherThe American Physical Societyen
dc.rights©2005 The American Physical Societyen
dc.subject.ddc530
dc.titleLight-induced Knight shifts in GaAs/AlGaAs quantum wellsen
dc.typeTextde
dc.type.publicationtypearticlede
dcterms.accessRightsrestricted
eldorado.identifier.urlhttp://e3.physik.tu-dortmund.de/~suter/eprints/Knight_shift.pdf

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