Application of the tight-binding method onto the Von Neumann equation

dc.contributor.authorAbdi, Alan
dc.contributor.authorSchulz, Dirk
dc.date.accessioned2026-02-16T10:02:17Z
dc.date.available2026-02-16T10:02:17Z
dc.date.issued2024-05-18
dc.description.abstractThis paper presents a numerical framework for the analysis of quantum devices based on the Von Neumann (VN) equation, which involves the concept of the Tight-Binding Method (TBM). The model is based on the application of the Tight-Binding Hamiltonian within Quantum Liouville Type Equations and has the advantage that the atomic structure of the materials used is taken into account. Furthermore, the influence of a Complex Absorbing Potential (CAP) as a complementary boundary condition and its essential contribution to the system stability with respect to the eigenvalue spectrum is discussed.en
dc.identifier.urihttp://hdl.handle.net/2003/44717
dc.language.isoen
dc.relation.ispartofseriesJournal of computational electronics; 23(4)
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectTight-binding methoden
dc.subjectDensity matrixen
dc.subjectQuantum Liouville type equationen
dc.subjectComplex absorbing potentialen
dc.subject.ddc620
dc.titleApplication of the tight-binding method onto the Von Neumann equationen
dc.typeText
dc.type.publicationtypeArticle
dcterms.accessRightsopen access
eldorado.dnb.deposittrue
eldorado.doi.registerfalse
eldorado.secondarypublicationtrue
eldorado.secondarypublication.primarycitationAbdi, A., Schulz, D. Application of the tight-binding method onto the Von Neumann equation. J Comput Electron 23, 707–717 (2024). https://doi.org/10.1007/s10825-024-02173-6
eldorado.secondarypublication.primaryidentifierhttps://doi.org/10.1007/s10825-024-02173-6

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