Authors: Hackmann, Johannes
Title: Spin dynamics in doped semiconductor quantum dots
Language (ISO): en
Abstract: Motivated by its possible role in quantum information processing, the spin dynamics in doped semiconductor quantum dots has been subject of numerous investigations in the past and is still studied intensively until the present day. One experimental approach to the measurement of spin dynamics is the spin noise spectroscopy. While it has not been addressed by many theoretical studies in the past, it will be subject of this work. Accordingly, the scope of this work is to present a theoretical model that is capable of describing the spin dynamics of resident electrons and holes confined in semiconductor quantum dots. Based on the Chebyshev polynomial expansion technique, the physical properties of the introduced model are investigated in detail and we demonstrate that it reproduces the results of several recent experiments adequately. Thereby this work constitutes the first fully quantum mechanical study that unifies the experimentally observed spin dynamics in n- and p-doped semiconductor quantum dots. At the same time an in-depth insight into the influence of the microscopic quantum dot properties onto the spin dynamics of the resident electron or hole is granted for the first time.
Subject Headings: Zentralspinmodell
Subject Headings (RSWK): Halbleiter
Issue Date: 2015
Appears in Collections:Theoretische Physik II

Files in This Item:
File Description SizeFormat 
Dissertation.pdfDNB5.95 MBAdobe PDFView/Open

This item is protected by original copyright

All resources in the repository are protected by copyright.