Impact of electrode materials on the performance of amorphous IGZO thin-film transistors
| dc.contributor.author | Tappertzhofen, Stefan | |
| dc.date.accessioned | 2023-08-23T05:53:34Z | |
| dc.date.available | 2023-08-23T05:53:34Z | |
| dc.date.issued | 2022-06-15 | |
| dc.description.abstract | This study reports on the fabrication and characterization of thin-film transistors (TFTs) based on indium–gallium–zinc–oxide (IGZO) with various source- and drain-region metals (Pt, W and Ti). The performance of the IGZO transistors is compared to TFTs based on hydrogenated amorphous silicon (a-Si:H) with Pt source- and drain-regions. From the output characteristics maximum saturation mobilities of µ = 0.45 cm2/Vs for a-Si:H, and µ = 24 to 50 cm2/Vs for IGZO TFTs are extracted, which are competitive to high-performance thin-film transistors. The study reveals a general influence of the source- and drain-electrode material on the maximum saturation mobility and inverse sub-threshold slope. | en |
| dc.identifier.uri | http://hdl.handle.net/2003/42070 | |
| dc.identifier.uri | http://dx.doi.org/10.17877/DE290R-23903 | |
| dc.language.iso | en | de |
| dc.relation.ispartofseries | MRS advances;7(30) | |
| dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | de |
| dc.subject.ddc | 620 | |
| dc.title | Impact of electrode materials on the performance of amorphous IGZO thin-film transistors | en |
| dc.type | Text | de |
| dc.type.publicationtype | Article | de |
| dcterms.accessRights | open access | |
| eldorado.secondarypublication | true | de |
| eldorado.secondarypublication.primarycitation | Tappertzhofen, S. Impact of electrode materials on the performance of amorphous IGZO thin-film transistors. MRS Advances 7, 723–728 (2022). https://doi.org/10.1557/s43580-022-00298-z | de |
| eldorado.secondarypublication.primaryidentifier | https://doi.org/10.1557/s43580-022-00298-z | de |