Characterisation of ionisation induced surface effects for the optimisation of silicon detectors for particle physics applications

dc.contributor.advisor	Gößling, Claus	de
dc.contributor.author	Wüstenfeld, Jens	de
dc.contributor.referee	Lindström, J. L.	de
dc.date.accepted	2001
dc.date.accessioned	2004-12-06T11:27:06Z
dc.date.available	2004-12-06T11:27:06Z
dc.date.created	2001-07-13	de
dc.date.issued	2001-11-12	de
dc.format.extent	14139495 bytes
dc.format.extent	7045659 bytes
dc.format.mimetype	application/postscript
dc.format.mimetype	application/pdf
dc.identifier.uri	http://hdl.handle.net/2003/2351
dc.identifier.uri	http://dx.doi.org/10.17877/DE290R-652
dc.language.iso	en	de
dc.publisher	Universität Dortmund	de
dc.subject	silicon	en
dc.subject	detector	en
dc.subject	silicon radiation detector	en
dc.subject	radiation damage	en
dc.subject	Surface damage	en
dc.subject	Silizium	de
dc.subject	Strahlenschäden	de
dc.subject	Detektor	de
dc.subject.ddc	530	de
dc.title	Characterisation of ionisation induced surface effects for the optimisation of silicon detectors for particle physics applications	en
dc.type	Text	de
dc.type.publicationtype	doctoralThesis	de
dcterms.accessRights	open access
eldorado.dnb.deposit	true

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