Authors: Suter, Dieter
Lenzmann, Björn
Eickhoff, Marcus
Hayes, Sophia E.
Wieck, Andreas D.
Title: Mapping of strain and electric fields in GaAs/AlGaAs quantum-well samples by laser-assisted NMR
Language (ISO): en
Abstract: The usefulness of semiconductor heterostructures derives from the possibility to engineer their electronic and optical properties to match the requirements of many different applications. Optically detected nuclear magnetic resonance provides the possibility to map microscopic properties of such samples with a high spatial resolution through the splitting of resonance lines. In a multiple quantum-well sample, we measure the distortion of the crystal lattice and find variations of the order of 10^(-5) over distances of a few mm. Internal electric fields also cause resonance line splittings. Comparing the electric field-induced resonance line splittings in different quantum wells, we mapped the vertical variation of the electric field from a Schottky contact with a spatial resolution of some 40 nm.
URI: http://hdl.handle.net/2003/25367
http://dx.doi.org/10.17877/DE290R-3217
Publishers Link: http://e3.physik.tu-dortmund.de/~suter/eprints/Strain_mapping.pdf
Issue Date: 2003-02-06
Rights: ©2003 The American Physical Society
Publisher: The American Physical Society
URL: http://dx.doi.org/10.1103/PhysRevB.67.085308
Citation: Eickhoff, Marcus; Lenzmann, Björn; Suter, Dieter; Hayes, Sophia E.; Wieck, Andreas D.: Mapping of strain and electric fields in GaAs/AlGaAs quantum-well samples by laser-assisted NMR. In: Physical Reviews B Jg. 67(2003), 085308[5 S.].
Appears in Collections:Suter, Dieter Prof. Dr.

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