Autor(en): | Tappertzhofen, Stefan Braeuninger-Weimer, P. Gumprich, Alexander Chirca, I. Potočnik, T. Alexander-Webber, J. A. Hofmann, S. |
Titel: | Transfer-free graphene passivation of sub 100 nm thin Pt and Pt–Cu electrodes for memristive devices |
Sprache (ISO): | en |
Zusammenfassung: | Memristive switches are among the most promising building blocks for future neuromorphic computing. These devices are based on a complex interplay of redox reactions on the nanoscale. Nanoionic phenomena enable non-linear and low-power resistance transition in ultra-short programming times. However, when not controlled, the same electrochemical reactions can result in device degradation and instability over time. Two-dimensional barriers have been suggested to precisely manipulate the nanoionic processes. But fabrication-friendly integration of these materials in memristive devices is challenging.Here we report on a novel process for graphene passivation of thin platinum and platinum/copper electrodes. We also studied the level of defects of graphene after deposition of selected oxides that are relevant for memristive switching. |
Schlagwörter: | Chemical vapor deposition CVD Graphene 2D material Heterostructure Adhesion layer Memristive switching |
URI: | http://hdl.handle.net/2003/42396 http://dx.doi.org/10.17877/DE290R-24232 |
Erscheinungsdatum: | 2023-02-24 |
Rechte (Link): | https://creativecommons.org/licenses/by/4.0/ |
Enthalten in den Sammlungen: | Lehrstuhl für Mikro- und Nanoelektronik |
Dateien zu dieser Ressource:
Datei | Beschreibung | Größe | Format | |
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s42452-023-05314-x.pdf | DNB | 1.44 MB | Adobe PDF | Öffnen/Anzeigen |
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