Transport and noise properties of AlGaN/GaN heterostructures for high-frequency applications

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DC Field	Value	Language
dc.contributor.advisor	Bayer, M.	-
dc.contributor.author	Kurakin, Andriy	-
dc.date.accessioned	2008-01-21T10:24:29Z	-
dc.date.available	2008-01-21T10:24:29Z	-
dc.date.issued	2008-01-21T10:24:29Z	-
dc.identifier.uri	http://hdl.handle.net/2003/24955	-
dc.identifier.uri	http://dx.doi.org/10.17877/DE290R-15751	-
dc.language.iso	en	de
dc.subject	III-nitrides	en
dc.subject	Noise	en
dc.subject	Low-temperature transport	en
dc.subject	AlGaN/GaN-structure	en
dc.subject	High Electron Mobility Transistor	en
dc.subject	HEMT	de
dc.subject	Resonant Tunneling Diode	en
dc.subject	RTD	de
dc.subject.ddc	530	-
dc.title	Transport and noise properties of AlGaN/GaN heterostructures for high-frequency applications	en
dc.type	Text	de
dc.contributor.referee	Tolan, M.	-
dc.date.accepted	2007-11-02	-
dc.type.publicationtype	doctoralThesis	de
dc.identifier.urn	urn:nbn:de:hbz:290-2003/24955-0	-
dcterms.accessRights	open access	-
Appears in Collections:	Experimentelle Physik II

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