Authors: Schürmann, Mark
Title: Strukturbestimmung an ultradünnen SiO2-Filmen auf 4H-SiC(0001) mittels Photoelektronenspektroskopie und -beugung
Language (ISO): de
Subject Headings: Photoelektronenbeugung
Siliziumkarbid
SiC
Halbleiteroberflächen
Grenzflächen
Photoemission
XPD
Geometrische Struktur
Semiconductor surface
Interface
URI: http://hdl.handle.net/2003/21664
http://dx.doi.org/10.17877/DE290R-74
Issue Date: 2005-10-28T07:02:30Z
Appears in Collections:Experimentelle Physik I

Files in This Item:
File Description SizeFormat 
Dissertation.pdfDNB5.25 MBAdobe PDFView/Open


This item is protected by original copyright



All resources in the repository are protected by copyright.