Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Westphal, Carsten | - |
dc.contributor.author | Schürmann, Mark | - |
dc.date.accessioned | 2005-10-28T07:02:30Z | - |
dc.date.available | 2005-10-28T07:02:30Z | - |
dc.date.issued | 2005-10-28T07:02:30Z | - |
dc.identifier.uri | http://hdl.handle.net/2003/21664 | - |
dc.identifier.uri | http://dx.doi.org/10.17877/DE290R-74 | - |
dc.language.iso | de | - |
dc.subject | Photoelektronenbeugung | de |
dc.subject | Siliziumkarbid | de |
dc.subject | SiC | de |
dc.subject | Halbleiteroberflächen | de |
dc.subject | Grenzflächen | de |
dc.subject | Photoemission | de |
dc.subject | XPD | de |
dc.subject | Geometrische Struktur | de |
dc.subject | Semiconductor surface | en |
dc.subject | Interface | en |
dc.subject.ddc | 530 | - |
dc.title | Strukturbestimmung an ultradünnen SiO2-Filmen auf 4H-SiC(0001) mittels Photoelektronenspektroskopie und -beugung | de |
dc.type | Text | de |
dc.contributor.referee | Weber, Werner | - |
dc.contributor.referee | Horn, K. | - |
dc.date.accepted | 2005-08-29 | - |
dc.type.publicationtype | doctoralThesis | - |
dc.identifier.urn | urn:nbn:de:hbz:290-2003/21664-2 | - |
dcterms.accessRights | open access | - |
Appears in Collections: | Experimentelle Physik I |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Dissertation.pdf | DNB | 5.25 MB | Adobe PDF | View/Open |
This item is protected by original copyright |
This item is protected by original copyright
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