Strukturbestimmung an ultradünnen SiO2-Filmen auf 4H-SiC(0001) mittels Photoelektronenspektroskopie und -beugung

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DC Field	Value	Language
dc.contributor.advisor	Westphal, Carsten	-
dc.contributor.author	Schürmann, Mark	-
dc.date.accessioned	2005-10-28T07:02:30Z	-
dc.date.available	2005-10-28T07:02:30Z	-
dc.date.issued	2005-10-28T07:02:30Z	-
dc.identifier.uri	http://hdl.handle.net/2003/21664	-
dc.identifier.uri	http://dx.doi.org/10.17877/DE290R-74	-
dc.language.iso	de	-
dc.subject	Photoelektronenbeugung	de
dc.subject	Siliziumkarbid	de
dc.subject	SiC	de
dc.subject	Halbleiteroberflächen	de
dc.subject	Grenzflächen	de
dc.subject	Photoemission	de
dc.subject	XPD	de
dc.subject	Geometrische Struktur	de
dc.subject	Semiconductor surface	en
dc.subject	Interface	en
dc.subject.ddc	530	-
dc.title	Strukturbestimmung an ultradünnen SiO2-Filmen auf 4H-SiC(0001) mittels Photoelektronenspektroskopie und -beugung	de
dc.type	Text	de
dc.contributor.referee	Weber, Werner	-
dc.contributor.referee	Horn, K.	-
dc.date.accepted	2005-08-29	-
dc.type.publicationtype	doctoralThesis	-
dc.identifier.urn	urn:nbn:de:hbz:290-2003/21664-2	-
dcterms.accessRights	open access	-
Appears in Collections:	Experimentelle Physik I

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