Authors: | Schürmann, Mark |
Title: | Strukturbestimmung an ultradünnen SiO2-Filmen auf 4H-SiC(0001) mittels Photoelektronenspektroskopie und -beugung |
Language (ISO): | de |
Subject Headings: | Photoelektronenbeugung Siliziumkarbid SiC Halbleiteroberflächen Grenzflächen Photoemission XPD Geometrische Struktur Semiconductor surface Interface |
URI: | http://hdl.handle.net/2003/21664 http://dx.doi.org/10.17877/DE290R-74 |
Issue Date: | 2005-10-28T07:02:30Z |
Appears in Collections: | Experimentelle Physik I |
Files in This Item:
File | Description | Size | Format | |
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Dissertation.pdf | DNB | 5.25 MB | Adobe PDF | View/Open |
This item is protected by original copyright |
This item is protected by original copyright
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