Charge collection in irradiated silicon detectors

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DC Field	Value	Language
dc.contributor.advisor	Gößling, Claus	de
dc.contributor.author	Krasel, Olaf	de
dc.date.accessioned	2004-12-06T11:27:14Z	-
dc.date.available	2004-12-06T11:27:14Z	-
dc.date.created	2004-07-29	de
dc.date.issued	2004-08-10	de
dc.identifier.uri	http://hdl.handle.net/2003/2354	-
dc.identifier.uri	http://dx.doi.org/10.17877/DE290R-14839	-
dc.format.extent	14695503 bytes	-
dc.format.mimetype	application/pdf	-
dc.language.iso	en	de
dc.publisher	Universität Dortmund	de
dc.subject	silicon detector	en
dc.subject	radiation damage	en
dc.subject	pixel detector	en
dc.subject	transient current technique	en
dc.subject	LHC	de
dc.subject	ATLAS	de
dc.subject	RD50	de
dc.subject.ddc	530	de
dc.title	Charge collection in irradiated silicon detectors	en
dc.title.alternative	a study of the operation conditions of silicon sensors in the ATLAS pixel detector	en
dc.type	Text	de
dc.contributor.referee	Rhode, W.	de
dc.date.accepted	2004	-
dc.type.publicationtype	doctoralThesis	de
dcterms.accessRights	open access	-
Appears in Collections:	Experimentelle Physik IV

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