Wieck, A. D.
|Title:||Depth profile of the implantation-enhanced intermixing of Ga + focused ion beam in AlAs/GaAs quantum wells|
|Abstract:||The implantation-induced intermixing depth profile for 100 keV Ga + ions was determined by photoluminescence measurements on a series of samples containing quantum wells at variable depth from the surface but identical thickness. They were uniformly implanted and subsequently a rapid thermal annealing was applied. The measured maximum of the intermixing occurred at a depth of about 70 nm, significantly deeper than theoretical predictions. These results are important for achieving sufficient intermixing with a low implantation dose, thereby optimizing crystal quality and lateral resolution.|
|Rights:||©1999 American Institute of Physics|
|Publisher:||American Institute of Physics|
|Citation:||Soheyla Eshlaghi, Cedrik Meier, Dieter Suter, D. Reuter, and A.D. Wieck: Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. In: J. Appl. Phys. 86, 6605-6607 (1999).|
|Appears in Collections:||Suter, Dieter Prof. Dr.|
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