Autor(en): | Suter, Dieter Eshlaghi, Soheyla Meier, Cedrik Reuter, D. Wieck, A. D. |
Titel: | Depth profile of the implantation-enhanced intermixing of Ga + focused ion beam in AlAs/GaAs quantum wells |
Sprache (ISO): | en |
Zusammenfassung: | The implantation-induced intermixing depth profile for 100 keV Ga + ions was determined by photoluminescence measurements on a series of samples containing quantum wells at variable depth from the surface but identical thickness. They were uniformly implanted and subsequently a rapid thermal annealing was applied. The measured maximum of the intermixing occurred at a depth of about 70 nm, significantly deeper than theoretical predictions. These results are important for achieving sufficient intermixing with a low implantation dose, thereby optimizing crystal quality and lateral resolution. |
URI: | http://hdl.handle.net/2003/25023 http://dx.doi.org/10.17877/DE290R-3474 |
Herausgeberlink: | http://e3.physik.tu-dortmund.de/~suter/eprints/Depth_profile_of_Implantati.pdf |
Erscheinungsdatum: | 1999-12-01 |
Provinienz: | American Institute of Physics |
URL: | http://link.aip.org/link/?JAPIAU/86/6605/1 |
Zitierform: | Soheyla Eshlaghi, Cedrik Meier, Dieter Suter, D. Reuter, and A.D. Wieck: Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. In: J. Appl. Phys. 86, 6605-6607 (1999). |
Enthalten in den Sammlungen: | Suter, Dieter Prof. Dr. |
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